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标题: 【晒FRAM铁电存储器样片】+新唐M058S测试读写FRAM MB85RS64 [打印本页]

作者: springvirus 时间: 2014-6-13 09:14 标题: 【晒FRAM铁电存储器样片】+新唐M058S测试读写FRAM MB85RS64

前一阵子申请了富士通的SPI 铁电片子MB85RS64，很快邮寄到了，给厂商赞一个! 看资料，铁电存储器吸收了Flash和RAM二者的优点于一身，耐擦写次数可达到10的12次方，写数据耗时也比Flash和EEPROM要少，片子在3.3V下操作，运行和待机功耗也做得很棒。这次的方案是用M058S的IO模拟SPI，完成读写，看了资料，主要就是注意6个 OP-CODE在操作时完成的功能。

在读状态寄存器之前，先赋值0xab，arraydata[]是读取buffer，writedata[]是写入 buffer，之前，测试时是这样，写入，由于使能了写使能1次，然后连续写，发现只在 0x00地址处写入了0xaa，细读手册，发现，每次写之后，片子都会复位写使能，所以每次写之前都要使能写使能，有点拗口，之后的测试向地址0x00~0x04，写入0xaa~0xee ，再读出，与写入的一样，读写成功。

片子操作不复杂，使用起来容易上手，性能不错，值得推荐!!

下面是图和源码

图片附件: 023b5bb5c9ea15ce17c1e08bb4003af33a87b200.jpg (2014-6-13 09:14, 390.56 KB) / 下载次数 781
http://bbs.eccn.com/attachment.php?aid=45367&k=61d0e6889c975cc4b15034a9dc531b99&t=1732222436&sid=vGbKZV

图片附件: 4e4a20a4462309f796c9ac90700e0cf3d6cad689.jpg (2014-6-13 09:14, 663.62 KB) / 下载次数 811
http://bbs.eccn.com/attachment.php?aid=45368&k=f83a7c6ca17f1b6f006ac08a1a92dd2e&t=1732222436&sid=vGbKZV

作者: springvirus 时间: 2014-6-13 09:21

uint8_t SpiRead(void)
//主机在SCK下降沿，从MISO上读取1字节
{
uint8_t i;
for(i=0;i<8;i++)
{
DATA_BUF = DATA_BUF<<1;

MB85RS64_SCK = 1;

if(MB85RS64_MISO)
{
DATA_BUF+=1;
}
else
{
DATA_BUF+=0;
}

MB85RS64_SCK = 0;
}
return DATA_BUF;
}

void SpiWrite(uint8_t byte)
//主机向MOSI写1字节，设备在SCK上升沿读取
{
uint8_t i;
DATA_BUF = byte;
MB85RS64_SCK = 0;
for(i=0;i<8;i++)
{
if(DATA_BUF >> 7)
{
MB85RS64_MOSI = 1;
}
else
{
MB85RS64_MOSI = 0;
}
#if 1
MB85RS64_SCK = 1;
DATA_BUF = DATA_BUF << 1;
MB85RS64_SCK = 0;
#else
MB85RS64_SCK = 0;
MB85RS64_SCK = 1;
DATA_BUF = DATA_BUF << 1;
#endif

}

}

void SetWriteEnableLatch(void)
//OP CODE: 0000 0110
{
MB85RS64_CS = 0;
SpiWrite(0x06);
MB85RS64_CS = 1;
}

void ResetWriteEnableLatch(void)
//OP CODE: 0000 0100
{
MB85RS64_CS = 0;
SpiWrite(0x04);
MB85RS64_CS = 1;
}

uint8_t ReadStatusRegister(void)
//OP CODE: 0000 0101
{
uint8_t rsr_byte;

MB85RS64_CS = 0;

SpiWrite(0x05);

rsr_byte = SpiRead();

MB85RS64_CS = 1;

return rsr_byte;

}

void WriteStatusRegister(uint8_t wsr_byte)
//OP CODE: 0000 0001
{
uint8_t rsr_byte;

MB85RS64_CS = 0;

SpiWrite(0x01);

SpiWrite(wsr_byte);

MB85RS64_CS = 1;
}

uint8_t ReadMemoryCode(uint16_t addr)
//OP CODE: 0000 0011
{
uint8_t rmc_byte;
uint8_t addr_high, addr_low;

addr_high = (uint8_t)(addr&0xff00)>>8;
addr_low = (uint8_t)(addr&0x00ff);

MB85RS64_CS = 0;

SpiWrite(0x03);

SpiWrite(addr_high);
SpiWrite(addr_low);

rmc_byte = SpiRead();

MB85RS64_CS = 1;

return rmc_byte;

}

void WriteMemoryCode(uint16_t addr, uint8_t wmc_byte)
//OP CODE: 0000 0010
{
uint8_t addr_high, addr_low;

addr_high = (uint8_t)(addr&0xff00)>>8;
addr_low = (uint8_t)(addr&0x00ff);

MB85RS64_CS = 0;

SpiWrite(0x02);

SpiWrite(addr_high);
SpiWrite(addr_low);

SpiWrite(wmc_byte);

MB85RS64_CS = 1;

}

void FRAM_Operate(void)
{
uint8_t status = 0xab;
uint8_t arraydata[5];
uint8_t writedata[5];
uint16_t i;

memcpy(writedata, "\xaa\xbb\xcc\xdd\xee", 5);

memcpy(arraydata, "\x01\x02\x03\x04\x05", 5);

TRACE("------- before Read ---------\r\n");
TRACE("status = 0x%02x", status);
printbuf("arraydata", arraydata, sizeof(arraydata));

SetWriteEnableLatch();

status = ReadStatusRegister();

for(i=0;i<sizeof(arraydata);i++)
{
arraydata[i] = ReadMemoryCode(i);
}

TRACE("------- after Read ---------\r\n");
TRACE("status = 0x%02x", status);
printbuf("arraydata", arraydata, sizeof(arraydata));

for(i=0;i<sizeof(writedata);i++)
{
SetWriteEnableLatch();
WriteMemoryCode(i, writedata[i]);

}

TRACE("\r\n------- after Write writedata ---------");
printbuf("writedata", writedata, sizeof(writedata));
TRACE("------- after Read again ---------");

memset(arraydata, 0x00, sizeof(arraydata));
for(i=0;i<sizeof(arraydata);i++)
{
arraydata[i] = ReadMemoryCode(i);
}

printbuf("arraydata", arraydata, sizeof(arraydata));

}

作者: springvirus 时间: 2014-6-13 09:23

既然是模拟SPI，涉及到的CS, MOSI, MISO, SCK可以自由设定了，注意MISO，设置成输入模式

作者: sfwang666 时间: 2014-7-15 17:06

铁电存储器擦写次数可达到10的12次方,性能稳定,可靠性比较好.

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