标题: STM32使用FSMC控制NAND flash 例程（2） [打印本页]

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作者: yuyang911220    时间: 2015-1-18 11:07     标题: STM32使用FSMC控制NAND flash 例程（2）

• void NAND_ReadID(NAND_IDTypeDef* NAND_ID)
• {
•   uint32_t data = 0;
•   /*!< Send Command to the command area */
•   *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = 0x90;
•   *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;
•    /*!< Sequence to read ID from NAND flash */
•    data = *(__IO uint32_t *)(Bank_NAND_ADDR | DATA_AREA);
•    NAND_ID->Maker_ID   = ADDR_1st_CYCLE (data);//四个周期读取四个ID
•    NAND_ID->Device_ID  = ADDR_2nd_CYCLE (data);
•    NAND_ID->Third_ID   = ADDR_3rd_CYCLE (data);
•    NAND_ID->Fourth_ID  = ADDR_4th_CYCLE (data);
• }

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• uint32_t NAND_WriteSmallPage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToWrite)
• {//传入参数：写入数据，写入初始地址，要写几页
•   uint32_t index = 0x00, numpagewritten = 0x00, addressstatus = NAND_VALID_ADDRESS;
•   uint32_t status = NAND_READY, size = 0x00;
•   while((NumPageToWrite != 0x00) && (addressstatus == NAND_VALID_ADDRESS) && (status == NAND_READY))
•   {
•     /*!< Page write command and address */
•     *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_A;
•     *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE0;
•     *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;
•     *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;//添加此句
•     *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
•     *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
• //    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);//原版有此句
•     /*!< Calculate the size */
•     size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpagewritten);//统计写入数目
•     /*!< Write data */
•     for(; index < size; index++)
•     {
•       *(__IO uint8_t *)(Bank_NAND_ADDR | DATA_AREA) = pBuffer[index];
•     }
•     *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE_TRUE1;
•     /*!< Check status for successful operation */
•     status = NAND_GetStatus();
•     if(status == NAND_READY)
•     {
•       numpagewritten++;
•       NumPageToWrite--;
•       /*!< Calculate Next small page Address */
•       addressstatus = NAND_AddressIncrement(&Address);
•     }
•   }
•   return (status | addressstatus);
• }

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读取函数同理修改

• uint32_t NAND_EraseBlock(NAND_ADDRESS Address)
• {
•   *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE0;
•   *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
•   *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
• //  *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);//两次即可
•   *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE1;
•   return (NAND_GetStatus());
• }

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fsmc_nand.h文件：

• #define NAND_PAGE_SIZE             ((uint16_t)0x0800) /* 512 bytes per page w/o Spare Area *///每页2K
• #define NAND_BLOCK_SIZE            ((uint16_t)0x0040) /* 32x512 bytes pages per block *///64个页
• #define NAND_ZONE_SIZE             ((uint16_t)0x0400) /* 1024 Block per zone *///1024个快
• #define NAND_SPARE_AREA_SIZE       ((uint16_t)0x0040) /* last 16 bytes as spare area */
• #define NAND_MAX_ZONE              ((uint16_t)0x0001) /* 4 zones of 1024 block */

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修改完即可实现512B至2K每页的变更

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