本人最近写一个程序，在MC08HC908SR12中将flash中的一个数据块进行擦写。
源程序如下：
#include "Cpu.h"
#include "Events.h"
/* Include shared modules, which are used for whole project */
#include "PE_Types.h"
#include "PE_Error.h"
#include "PE_Const.h"
#include "IO_Map.h"
#define N 200
void DoEarseFlash(void);
void DoWriteFlash(void);
/*------------MOVE PROGRAM FROM FLASH TO RAM------------*/
void move(void(*p)(),byte size)
{
byte *w;
byte i=0;
w=(byte *)0x0100;
for(i=0;i<size;i++)
*(w+i)=*((byte*)(p)+i);
}
/*------------------------------------------------------*/
/*---------MOVE DoEraseFlash form FLASH to RAM-----------*/
void EraseFlash(void)
{
void(*a)();
move(DoEarseFlash,0x3E);
a=(byte *)0x0100;
(*a)();
}
/*-------------------------------------------------------*/
/*---------MOVE DoWriteFlash form FLASH to RAM-----------*/
void WriteFlash(void)
{
void(*t)();
move(DoWriteFlash,0x50);
t=(byte *)0x0100;
(*t)();
}
/*-------------------------------------------------------*/
/*-------------DoEraseFlash:擦除指定flash区------------*/
void DoEarseFlash(void)
{
unsigned char i;
FLBPR=0x01; //设置flash保护区
FLCR1=0b00000010; //1->ERASE,0->MASS(页擦除)
i=FLBPR; //读FLBPR
*((volatile unsigned char *)0xC000)=0x99;//向被擦写的单元写任意字符
for(i=0;i<N;i++); //延时10us
FLCR1=0b00001010; //1->HVEN (加高压)
for(i=0;i<N;i++); //延时时间必须>1.6ms
FLCR1=0b00001000; //0->Erase
for(i=0;i<N;i++); //10us
FLCR1=0b00000000; //0->HVEN(取消高压)
for(i=0;i<N;i++); //延时10us
}
/*-----------DoWriteFlash:实际执行的写入函数-----------*/
void DoWriteFlash(unsigned int addr)
{
unsigned char i;
FLBPR=0x01;
FLCR1=0b00000001; //1-> GM,编程状态
i=FLBPR; //读FLBPR
*((volatile unsigned char *)(addr))=0x88;//0x88->C000,选中flash行
for(i=0;i<N;i++); //10us
FLCR1=0b00001001; //1->HVEN
for(i=0;i<N;i++); //10us
*((volatile unsigned char *)addr)=0x88;//将数据写入相应的flash地址
FLCR1=0b00001000; //0->GM
for(i=0;i<N;i++); //10us
FLCR1=0b00000000; //0->HVEN
for(i=0;i<N;i++); //10us
}
void main(void)
{
/** * Processor Expert internal initialization. DON'T REMOVE THIS CODE!!! ***/
PE_low_level_init();
FLBPR=0x01;
EraseFlash();
DoEarseFlash();
WriteFlash();
DoWriteFlash(0xC000);
FLBPR=0;
问题：
1.我的FLBPR不能修改，即FLBPR(FE09)＝0x00不能将它置为1。而FLCR1（FE08）可以访问并且修改！
2.似乎从c000－c080的flash代码段没有被擦写，不知道我的程序是否有错，欢迎大家指正，谢谢！
[此贴子已经被作者于2005-11-30 22:16:37编辑过] | 
