- UID
- 1023166
- 性别
- 男
- 来自
- 燕山大学
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本征半导体:intrinsic semiconductor
掺杂半导体:doped semiconductor
P型半导体:P-type semiconductor
N型半导体:N-type semiconductor
自由电子:free electron
空穴:hole
载流子:carriers
PN结:PN junction
扩散:diffusion
漂移:drift
二极管:diode
硅二极管:silicon diode
锗二极管:germanium diode
阳极:anode
阴极:cathode
发光二极管:light-emitting diode (LED)
光电二极管:photodiode
稳压二极管:Zener diode
晶体管(三极管):transistor
PNP型晶体管:PNP transistor
NPN型晶体管:NPN transistor
发射极:emitter
集电极:collector
基极:base
电流放大系数:current amplification coefficient
场效应管:field-effect transistor (FET)
P沟道:p-channel
N沟道:n-channel
结型场效应管:junction FET(JFET)
金属氧化物半导体:l-oxide semiconductor (MOS)
耗尽型MOS场效应管:depletion mode MOSFET(D-MOSFET)
增强型MOS场效应管:enhancement mode MOSFET(E-MOSFET)
源极:source
栅极:grid
漏极:drain
跨导:transconductance
夹断电压:pinch-off voltage
热敏电阻:thermistor
开路:open
短路:shorted |
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